symbol test conditions maximum ratings unit i t(av) i t(rms) single phase, half wave, 180 o c conduction,t c =114 o c 250 392 a a 2 s t vj t vjm t stg -30...+150 150 -30...+125 o c weight 169 g i 2 t i tsm p gm p g(av) i fgm v fgm v rgm di/dt ms to heatsink m6 3 ~ 5 mt to terminals m 6 2.5 5 nm 1/2cycle, 50hz/60hz, peak value, non-repetitive 6750/7420 a 620000 10 1 w 3 a 10 5 v ig=15 0ma, tj=25 o c, v d =1/2v drm , di g /dt=1a/us 60 a /us ~ three phase thyristor module (half bridge) 3ta 250gkxxnb dimensions in mm (1mm = 0.0394") type 3TA250GK03NB 3ta250gk04nb 3ta250gk06nb v rrm v 300 400 v rsm v 400 500 k1 g1 k2 g2 3g 3k 1 2 3 a k3 k2 k1 k3 k2 k1 a g3 g2 k2 k3 k1 g1 400 500 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
symbol test conditions unit i rrm v tm v i gt i drm ma r thjc v gd tgt min. typ. max. at v drm, single phase, half wave, tj=150 o c on-state current 750a, tj=25 o c inst. measurement dv/dt i h tj=25 o c, i t =1a, v d =6v tj=150 o c, v d =1/2v drm i t =100a, i g =200ma, tj=25 o c, v d =1/2v drm , di g /dt=1a/us tj=150 o c, v d =2/3v drm , exponential wave tj=25 o c junction to case (1/3 module) 80 80 1.25 200 0.25 10 150 150 0.09 ma v us v/us ma o c/w application: v gt 2 v three phase thyristor module (half bridge) features * international standard package * glass passivated chips * rohs compliant advantages * space and weight savings * simple mounting with two screws * improved temperature and power cycling * reduced protection circuits applications * welding machine power supply * dc power supply * copper base plate 3ta250gkxxnb three phase thyristor module (half bridge) p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
` ` ` transient thermal impedance time t sec transient thermal impedance j-c/w per one element junction to case 360 2 conduction angle case temperaturesingle phase half wave average on-state currenta allowable case temperature d.c. per one element ?30 b ?60 b ?90 b ?120 b ?180 b on-state voltage max on-state voltagev on-state currenta non-repetitive timecycles surge on-state currenta hz per one element : conduction angle 360 2 per one element ?90 b single phase half wave average on-state currenta power dissipationw d.c. ?30 b ?60 b ?120 b ?180 b gate characteristics gate currentma gate voltagev peak gate currenta power10w average gate power1w maximum gate voltage that will not terigger any unit 7000 4000 5000 6000 3000 8000 3ta250gkxxnb three phase thyristor module (half bridge) p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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